Resumen:
Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high?frequency capacitance?voltage (C?V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as 3/4 Si0 and 3/4 Si?. Electron spin resonance measurements, carried out both at room temperature and at 77 K, confirmed the presence of defects such as 3/4 Si0 surrounded by Si bonds.
Índice de impacto JCR-JIF y cuartil WoS: 3,800 - Q2 (2025)
Referencia DOI:
https://doi.org/10.1063/1.103109
Publicado en papel: Abril 1990.
Publicado on-line: Junio 1998.
Cita:
A. Piccirillo, A.L. Gobbi, M. Ferraris, R. Giannetti, P.E. Bagnoli, "Identification of silicon nitride/InGaAs interface states", Applied Physics Letters, Vol. 56, nº. 17, pp. 1661 - 1663, Abril 1990. [Online: Junio 1998] doi: 10.1063/1.103109
